Toshiba Unveils New Series of SiC Diodes

Toshiba has launched its new 'TRSxxx120Hx Series' of 1200V silicon carbide Schottky barrier diodes (SBDs), aimed at enhancing efficiency in industrial applications such as photovoltaic inverters and electric vehicle charging stations. The series includes ten models, divided between TO-247-2L and TO-247 packages, utilizing an advanced junction barrier Schottky (JBS) structure that achieves a low forward voltage of 1.27V. These diodes can handle a maximum forward DC current of 40A and a peak surge current of 270A, with a maximum case temperature rating of 175°C. The improved design reduces power losses, enabling better thermal management and efficiency in high-power applications. Toshiba is committed to expanding its silicon carbide product lineup to further reduce equipment power loss.