China's YMTC Achieves Memory Chip Breakthrough Despite US Sanctions
China's YMTC Achieves Memory Chip Breakthrough Despite US Sanctions

China's YMTC Achieves Memory Chip Breakthrough Despite US Sanctions

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Chinese semiconductor companies are making significant advancements in chip technology despite ongoing US export controls aimed at limiting their capabilities. ChangXin Memory Technologies Inc. (CXMT) recently developed DDR5 dynamic random access memory with a 16-nanometer half pitch, marking a notable milestone in the Chinese market. Meanwhile, Yangtze Memory Technologies Corporation (YMTC) has introduced a new Xtacking4.0 memory chip design featuring 294 gates, achieved through hybrid-bonding techniques, which enhances its storage density to over 20 gigabits per square millimeter. These breakthroughs illustrate the resilience and innovation of Chinese firms in the face of geopolitical challenges, with analysts suggesting that YMTC is now leading in the global memory chip market. Both companies' advancements reflect China's broader strategy of achieving technological self-sufficiency in the semiconductor sector. TechInsights reports indicate that despite a competitive landscape, these advancements could help counteract the effects of US sanctions on Chinese technology.

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